? semiconductor components industries, llc, 2010 october, 2010 ? rev. 2 1 publication order number: bc847cdxv6t1/d bc847cdxv6t1, bc847cdxv6t5 bc848cdxv6t1, bc848cdxv6t5 dual general purpose transistors npn duals these transistors are designed for general purpose amplifier applications. they are housed in the sot ? 563 which is designed for low power surface mount applications. features ? these are pb ? free devices maximum ratings rating symbol bc847 bc848 unit collector ? emitter voltage v ceo 45 30 v collector ? base voltage v cbo 50 30 v emitter ? base voltage v ebo 6.0 5.0 v collector current ? continuous i c 100 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation, (note 1) t a = 25 c derate above 25 c p d 357 2.9 mw mw/ c thermal resistance, junction-to-ambient (note 1) r ja 350 c/w characteristic (both junctions heated) symbol max unit total device dissipation, (note 1) t a = 25 c derate above 25 c p d 500 4.0 mw mw/ c thermal resistance, junction-to-ambient (note 1) r ja 250 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad sot ? 563 case 463a plastic 1 6 q 1 (1) (2) (3) (4) (5) (6) q 2 http://onsemi.com marking diagrams 1x m bc847cdxv6t1 1x = device code x = g or m m = date code =pb ? free package (note: microdot may be in either location) 1 see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
bc847cdxv6t1, bc847cdxv6t5 bc848cdxv6t1, bc848cdxv6t5 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 ma) bc847cdxv6t1 bc848cdxv6t1 v (br)ceo 45 30 ? ? ? ? v collector ? emitter breakdown voltage (i c = 10 a, v eb = 0) bc847cdxv6t1 bc848cdxv6t1 v (br)ces 50 30 ? ? ? ? v collector ? base breakdown voltage (i c = 10 a) bc847cdxv6t1 bc848cdxv6t1 v (br)cbo 50 30 ? ? ? ? v emitter ? base breakdown voltage (i e = 1.0 a) bc847cdxv6t1 bc848cdxv6t1 v (br)ebo 6.0 5.0 ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) (i c = 2.0 ma, v ce = 5.0 v) h fe ? 420 270 520 ? 800 ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector ? emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ? emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ? emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ? emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small ? signal characteristics current ? gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k ,f = 1.0 khz, bw = 200 hz) nf ? ? 10 db ordering information device specific marking package shipping ? bc847cdxv6t1 1g sot ? 563 4000 units / tape & reel bc847cdxv6t1g sot ? 563 (pb ? free) 4000 units / tape & reel bc847cdxv6t5 sot ? 563 8000 units / tape & reel bc847cdxv6t5g sot ? 563 (pb ? free) 8000 units / tape & reel bc848cdxv6t1 1l sot ? 563 4000 units / tape & reel bc848cdxv6t1g sot ? 563 (pb ? free) 4000 units / tape & reel bc848cdxv6t5 sot ? 563 8000 units / tape & reel bc848cdxv6t5g sot ? 563 (pb ? free) 8000 units / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bc847cdxv6t1, bc847cdxv6t5 bc848cdxv6t1, bc848cdxv6t5 http://onsemi.com 3 typical characteristics figure 1. dc current gain vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 100 300 400 600 700 900 1000 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.1 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 200 500 800 v ce = 1 v 150 c 25 c ? 55 c i c /i b = 20 150 c 25 c ? 55 c 0.7 0.9 i c /i b = 20 150 c 25 c ? 55 c 0.4 0.7 1.0 v ce = 5 v 150 c 25 c ? 55 c
bc847cdxv6t1, bc847cdxv6t5 bc848cdxv6t1, bc848cdxv6t5 http://onsemi.com 4 typical characteristics figure 5. collector saturation region i b , base current (ma) figure 6. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 7. capacitances v r , reverse voltage (volts) 10 figure 8. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib figure 9. safe operating area v ce , collector emitter voltage (v) 100 10 1 0.1 0.001 0.01 0.1 1 i c , collector current (a) thermal limit 100 ms 10 ms 1 ms 1 s
bc847cdxv6t1, bc847cdxv6t5 bc848cdxv6t1, bc848cdxv6t5 http://onsemi.com 5 package dimensions h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches sot ? 563, 6 lead case 463a ? 01 issue f e m 0.08 (0.003) x b 6 5 pl a c ? x ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. style 1: pin 1. emitter 1 2. base 1 3. collector 2 4. emitter 2 5. base 2 6. collector 1 d e y 12 3 4 5 l 6 h e 0.08 0.12 0.18 0.003 0.005 0.007 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 bc847cdxv6t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
